By Poincare H.

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2023- 2025, (1989).

D. 5 THz," Appl. Phys. Lett, vol. 43, pp. 588-590 (1983). [4] L. L. E. Mendez, "Polytype superlattices and multiheterojunctions", Jpn. J. Appl. Phys. vol. 20, pp. L529-L532 (1981). [5] M. Sweeny and J. Xu, "Resonant interband tunnel diode", Appl. Phys. Lett. vol. 54, pp. 546-548 (1989). 49 [6] R. H. C. F. Luo, R. 1. Wang, "Interband Tunneling in Polytype Heterostructures," Appl. Phy. Lett. , vol. 55, pp. 2023- 2025, (1989).

4-nm AlAS MQW structure. The inset shows the dependence of the PL peak energy indicated by the downward arrows on the bias voltage. AlAs MQW structure around the bias voltages V providing the PL quenching. The PL peak shifts to lower energy with decreRsing V (Stark shift). The simultaneously observed spectral broadening is cause8 by the monolayer fluctuation of the well width / 7 / • The Stark shift depicted in the inset of Fig. 3 shows anomalies around the voltages necessary for the luminescence quenching, although it is otherwise proportional to the square of the electric field.

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